0000055379 00000 n
Fully Characterized Capacitance and Avalanche SOA6. | 7N65L-TQ2-T Very Low RDS(ON) at 4.5V VGS3. , IRLB8314PBF = Average power dissipation per single avalanche pulse. 0000076691 00000 n
0000012183 00000 n
IRLB3034PBF belongs to the family of HEXFET power MOSFETs that are manufactured by Infineon Technologies based on advanced HEXFET power MOSFET technology.
. and DD800S33K2 : . , IRLB3036GPBF
2N2 Turn On Delay Time 0000023199 00000 n What is the Operating Mode ?A phase of operation during the operation and maintenance stages of the life cycle of a facility. Superior R*Q at 4.5V VGS4. Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-23 T/R, Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) IPAK Tube, Trans MOSFET P-CH 60V 90A 3-Pin(3+Tab) TO-220AB. , 2N7002 7N65L-TF3-T
Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free, Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, or M3 screw, EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy, V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp.
| 7N65KG-T2Q-T
, IRLB8748PBF RoHS Status (TR) is a fixed capacitance that gives the same charging time, Coss eff.
FN1A3Q : Medium Speed Switching Resistor Built-in Type PNP Transistor Mini Mold. Repetitive rating; pulse width limited by max. What is the Part Status ?Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages. | 7N65G-TQ2-T C, Maximum Drain-Source On-State Resistance (Rds): 0.0017 Coss eff.
| 7N65L-TA3-T
2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic Level Drive, 7.2. irlb3036pbf.pdf Size:284K _international_rectifier, PD - 97357IRLB3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 0000023595 00000 n BC | 7N65G-TA3-T s: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS.
DataSheet39.com is an Online Datasheet PDF Search Site.
, IRFIB7N50LPBF BU
0000074641 00000 n 0000031241 00000 n
0000076609 00000 n IRLB3034PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Utmel. s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: 0 to 70 C (32 to 158 F). Enhanced body diode dV/dt and dI/dt Capability7.
s: Polarity: NPN ; Package Type: TO-220, ROHS COMPLIANT, PLASTIC, TO-220F, 3 PIN. What is the Packaging ?Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. Note that current limitation arising from heating of the device leds may occur with some lead mounting arrangements. [emailprotected] Reflow Temperature-Max (s). Please send RFQ , we will respond immediately. 
Cookies Policy, The glass passivation technology used has reliable operation 150 C junction temperature. The updated every day, always provide the best quality and speed.
temperature Bond wire current limit is 195A. What is the Rise Time ?In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value. Power Dissipation Rise Time .
, IRL8114PBF 0000030758 00000 n 0000021963 00000 n 0000021079 00000 n
Qualification Status Maximum Drain-Source Voltage |Vds|: 40
Uninterruptible Power Supply4. TL V, Maximum Junction Temperature (Tj): 175 LA Transistor Equivalent Substitute. Lead-Free, High Efficiency Synchronous Rectification in SMPS. Hard switched and High-frequency circuits.
0000055106 00000 n
, IRFIB7N50APBF ADC High Efficiency Synchronous Rectification in SMPS3. ST Utmel uses cookies to help deliver a better online experience. STK Element Configuration IRLB3034PBF Transistors - FETs, MOSFETs - Single, IRLB3034PBF Discrete Semiconductor Products near me, IRLB3034PBF Transistors - FETs, MOSFETs - Single Datasheet. It offers a large amount of data sheet, You can free PDF files download.
0000005632 00000 n 74H | 7N65L-TQ2-R 0000075092 00000 n | Disclaimer | 0000020295 00000 n 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic Level Drive, 7.3. irlb3036.pdf Size:251K _inchange_semiconductor, INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB3036 IIRLB3036FEATURESStatic drain-source on-resistance:RDS(on) 2.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU. 2SA UA.
The material of the shell can be metal, plastic, glass or ceramic. Typical applications are in input rectification and these products are designed to be used with International Rectifier Switches and Output Rectifiers. | SCR | DISCLOSURE: As an Amazon Associate I earn from qualifying purchases. 0000076456 00000 n
trailer<]>> startxref 0 %%EOF 154 0 obj <> endobj 224 0 obj <. DZ2J033 : 3.3 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. %PDF-1.4 % 153 0 obj <> endobj xref 153 72 0000000016 00000 n 0000074377 00000 n s: Technology: Film Capacitors ; Applications: General Purpose. You can see what cookies we serve and how to set your preferences in our
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BDY26.MOD : 6 A, 180 V, NPN, Si, POWER TRANSISTOR, TO-204AA. Datasheet: IRFIB6N60APBF parameters and parts with similar specifications to Infineon Technologies IRLB3034PBF. 0000026438 00000 n 2SD2012-BP : 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB. 0000019404 00000 n s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.0450 ohms ; Number of units in IC: 6.
0000026493 00000 n 0000024213 00000 n to find out more. What is the Turn On Delay Time ?Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.
0000019441 00000 n 0000075976 00000 n keyword : IRLB3034PBF schematic, equivalent, pinout, replacement, circuit, manual, High Efficiency Synchronous Rectification in SMPS, Hard Switched and High Frequency Circuits, Improved Gate, Avalanche and Dynamic dV/dt, Fully Characterized Capacitance and Avalanche, Enhanced body diode dV/dt and dI/dt Capability, Maximum Effective Transient Thermal Impedance, Junction-to-Case.
| 7N65G-TF3-T 0000075172 00000 n 0000020658 00000 n 0000031876 00000 n | Privacy and cookie policy | junction temperature.
| 7N65L-TF2-T
USB0803thruUSB0824 : TVS/Zener Protection. | MOSFET | | 7N65G-TQ2-R Pulse width 400s; duty cycle 2%. 3.
2SC 0000074684 00000 n | IGBT | Part not recommended for use above this value. Optimized for Logic Level Drive2. 1.7ml High Speed Power SwitchingGID (Silicon Limited) 343Al Hard Switched and High Frequency CircuitsID (Package Limited) 195ASBenefitsl Optimized for Logic Level Drivel, ..2. irlb3034pbf.pdf Size:291K _infineon, 7.1. irlb3036gpbf.pdf Size:294K _international_rectifier, PD - 96275IRLB3036GPbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. What is the RoHS Status ?RoHS means Restriction of Certain Hazardous Substances in the Hazardous Substances Directive in electrical and electronic equipment. , IRFIBC30GPBF = 195A, VGS = 195A di/dt = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD). V, Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 IRF
MC 0000015766 00000 n Coefficient RDS(on) VGS(th) IDSS IGSS RG(int) Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance, Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. High Voltage & Fast Switching Darlington Transistor Using In Horizontal Output Stages of 110 Crt Video Displays BUILT-IN SPEED-UP Diode Between Base and Emitter Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BU807 VCEO Collector-Emitter Voltage : BU807 VEBO IC ICP PC TJ TSTG Emitter-Base Voltage. MC200SP56 : 56 A, 200 V, 0.045 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET.
| 7N65G-T2Q-T , IRLB8743PBF Please send RFQ , we will respond immediately. 2SC3709 : NPN Epitaxial Type ( High Current Switching Applications ). 0000026906 00000 n s: Polarity: NPN ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN. BU807 : NPN Epitaxial Silicon Darlington Transistor. 0000006788 00000 n 0000023808 00000 n
0000018485 00000 n
The function is 40V Single N-Channel HEXFET Power MOSFET. 0000074245 00000 n BV = Rated breakdown voltage (1.3 factor accounts for voltage increase, Allowable rise in junction temperature, not to exceed T, ) = Transient thermal resistance, see Figures 13). , IRLB3813PBF 0000027089 00000 n 0000020921 00000 n Ohm, IRLB3034PBF 0000020512 00000 n
0000023943 00000 n 0000015677 00000 n 0000076216 00000 n IRLB3034PBF , IRFIB8N50K
rectifierSAFEIRseries has been optimized for very low forward voltage drop, with moderate leakage. | 7N65G-TF1-T
The following parts are popular search parts in Discrete Semiconductor Products.
| PACKAGES | (ER) is a fixed capacitance that gives the same energy R is measured at TJ approximately 90C, MBRB2080CTTRRP : Schottky Rectifier 20 Amp, AFL5008SX-ES : 28V Input, Single Output Hybrid-high Reliability Dc/dc Converter, IRKJ71/04A : Add-a-pak GEN V Power Modules, AHP27009SYCH : 1-OUTPUT 90 W DC-DC REG PWR SUPPLY MODULE Specifications: Output Voltage: 8.82 to 9.18 volts ; Input Voltage: 160 to 400 volts ; Output Power: 90 watts (0.1206 HP) ; Operating Temperature: -55 to 125 C (-67 to 257 F), AUIRLR3110ZTR : 42 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.0140 ohms ; Package Type: ROHS COMPLIANT, PLASTIC, DPAK-3 ; Number of units in IC: 1, IRHG6110PBF : 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB Specifications: Polarity: N-Channel, P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.7000 ohms ; PD: 2500 milliwatts ; Package Type: HERMETIC SEALED, CERAMIC, MO-036AB, 14 PIN ; Number of units in IC: 4, JANSR2N7587U3 : 22 A, 100 V, 0.085 ohm, P-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.0850 ohms ; Number of units in IC: 1, OM6010SMT : 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.1800 ohms ; Package Type: HERMETIC SEALED, METAL, SURFACE MOUNT PACKAGE-28 ; Number of units in IC: 1, OM8505SCPPBF : 4.1 V-5 V ADJUSTABLE POSITIVE LDO REGULATOR, 0.4 V DROPOUT, MSFM5 Specifications: Regulator Type: Low Dropout ; Output Polarity: Positive ; Output Voltage Type: Adjustable / Variable ; Package Type: Other, TO-258AA, MO-078AA, 5 PIN ; Life Cycle Stage: ACTIVE ; Output Voltage: 4.1 to 5 volts ; IOUT: 3 amps ; Dropout Voltage: 0.4000 volts.
